top of page
JOURNALS
2023
Ultra-high Tunneling Electroresistance Ratio (2×10^4) & Endurance (10^8) in Oxide Semiconductor-Hafnia Self-rectifying (1.5×10^3) Ferroelectric Tunnel Junction
IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Junghyeon Hwang, Chaeheon Kim, Hunbeom Shin, Hwayoung Kim, Sang-Hee Ko Park and Sanghun Jeon
2022
Highly Sensitive Mutual-Capacitive Fingerprint Sensor With Reference Electrode
IEEE ELECTRON DEVICE LETTERS
Junghoon Yang+, Yeon-Wha Oh+, Sarawut Siracosit , Hyunwoo Park, Jungmoo Lee, Sang Gyun Kim, Hanbyul Kim, Kyunghak Lee , Guk-Jin Jeon , Jae-Hyun Ahn, Sang-Hee Jung, Il-Suk Kang , and Sang-Hee Ko Park
2022
An immunosensor based on a high performance dual-gate oxide semiconductor thin-film transistor for rapid detection of SARS-CoV-2
Lab on a Chip
Jingyu Kim+, Sehun Jeong+, Siracosit Sarawut, Haneul Kim, Seong Uk Son, Seungheon Lee, Gulam Rabbani, Hyunhwa Kwonm, Eun-Kyung Lim, Saeyoung Nate Ahn, and Sang-Hee Ko Park*
bottom of page