RESEARCH

 

Next generation Oxide TFT and deformable display

Flexible and transparent displays

Flexible and transparent displays have attracted much attention because they can be applied to various environments such as wearable device, glass of transportation or buildings, mirrors for everyday life and so on. We realize flexible and transparent oxide TFTs by using peel-off methods

Vertical TFT

Recently, new technologies represented by VR (Virtual Reality) and AR (Augmented Reality) are getting much attention as the killer application for the next-generation display. Many devices such as Oculus lift,Gear VR and Hololens have already shown us the possibilities of the realization of those new technologies. However, there still remain several critical issues, and one of them is the resolution of display. For example, the latest high-end smartphone displays on the market usually offers 500~600 ppi (pixels per inch) of pixel density, and it is not enough to give the sense of reality to the VR or AR users. To solve this problem, higher resolution and pixel density of several thousands ppi are expected to be desired for the next-generation display. In that point, oxide semiconductor based vertical structure thin-film transistor (VTFT) can be a good candidate for the backplane of future display. Due to its vertical channel structure, it gives smaller footprint than the conventional BCE structure TFT. Therefore, it is able to reduce the size of pixels and offer more pixels within a display panel. Moreover, it is possible to downsize the channel length under 1um by using the existing photolithography equipments. This can give us enhanced current drivability, and higher on-current level.

Self-Align TFT

Displays with large size and high resolution are required in many electronic devices. In recent years, 8k ultra-high-definition (UHD) display has been developed. Oxide thin film transistors using amorphous indium-tin-zinc oxide (a-ITZO) have been attracted considerable attention for their potential applications in large area and high resolution display because its good uniformity, low off current and high mobility. Top gate coplanar self-align TFT is crucial in realizing high resolution display because of the advantages that can reduce parasitic capacitance between S/D and gate electrodes. However, oxide TFTs suffer from channel shortening effect due to lateral carrier diffusion. the origin of channel shortening effect is known to be the combined effects of the Vo generation in the SD region by the exposure of Ar or He plasma, reaction between S/D metal and active layer beneath the SD electrode, and H diffusion from gate insulator to the active layer. We will primarily focus on investigating the origin of channel shortening effect and finding new electrode compositions, novel semicontors, and new dielectric materials. 

Highly stable high mobility oxide TFT

Recently, display has been rapidly developed to ultra-high resolution to provide realistic image. We realize highly stable high mobility oxide TFTs for the next-generation displays by tailoring the channel of the oxide TFTs.

Thin Film Encapsulation

Organic light emitting diode (OLED) is attracting attention as a light emitting technology to realize flexible display because of low price, low power consumption, and vivid color. OLED is composed of anode, organic emitting material and cathode. Each component is deteriorated when exposed to water and oxygen, making it difficult to use for a long time. Therefore, it is essential to develop a thin film encapsulation technology that effectively blocks the external environment for long-term use in OLED-based mobile and TV. We are currently focusing on nitride, alumina-based thin film encapsulation technology that is thin and high-performance for barrier.

대전광역시 유성구 대학로 291 (구성동373-1) 한국과학기술원(KAIST) 4405호

Korea Advanced Institute of Science and Technology, Guseong-dong, Yuseong-gu, Daejeon,

305-701 Rep. of KOREA

TEL : +82-42-350-3356 | FAX : +82-42-350-3310 

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