Neuromorphic Devices & Inter Metal Dielectrics
1. Neuromorphic Devices
Conventional semiconductor devices are developed based on von Neumann computing system. However, due to the inherent problems of von Neumann's architecture; the limits of satisfying Moore's law were reached. On the other hand, human brain has huge advantages of handling complex problems. For example, the brain has good energy efficiency compared to von Neumann’s architecture and it can handle logic and memory in parallel. These kinds of reasons, Brain-liked system called ‘Neuromorphic System’ is considered as a next generation computing system. To implement neuromorphic system, artificial neuron and synapse devices that mimic the brain are needed; we research about these artificial devices. Especially, we focus on Synaptic Thin Film Transistors (Synaptic TFTs). Consider Gate as pre-synapse, Source & Drain and Active layer as post-synapse and conductance of the channel as synaptic weight. Synaptic TFTs operate in such a way that a change in the conductance when pulse voltage is applied to the electrode. In this way, TFT mimics the synaptic plasticities that occur in the real human brain, which become a mechanism of both memory and logic. Our team has advanced technologies in TFTs with Oxide semiconductor. We have applied these advanced technologies to the Display field; from now on, we will combine them with Semiconductor field to implement neuromorphic with low energy consumption with various operating mechanisms.
2. Inter Metal Dielectrics
In the recent years, micro-electronic technologies have a high demand for inter-metal-dielectric (IMD) layers with a extremely low dielectric constant. These materials are expected to play a crucial role in the future generation of IC devices (VLSI/UISI and high speed IC packaging). Besides their low dielectric constants, these materials exhibit excellent physical properties such as good processability, high mechanical strength, high thermal and environmental stability, low thermal expansion, low current leakage, low moisture absorption, and corrosion resistant. We will investigate the morphology, mechanical and electrical properties of low-k films (SiCOH) grown by PECVD method. This study will provide the applicability of low-k films for inter-metal-dielectric (IMD) layers to replace conventional SiO2.