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JOURNALS

2010

Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell

IEEE Electron Devices Letters

Yoon Sung-Min, Byun Chun-Won, Yang Shinhyuk, Sang-Hee Ko Park, Cho Doo-Hee, Jung Soon-Won, Kang Seung-Youl, Hwang Chi-Su

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2010

Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator

Electrochemical and Solid-State Letters

Sung-Min Yoon, Shin-Hyuk Yang, Soon-Won Jung, Chun-Won Byun, Sang-Hee Ko Park, Chi-Sun Hwang, and Hiroshi Ishiwara

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2010

Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications

Journal of The Electrochemical Society

Sung-Min Yoon, Sang-Hee Ko Park*, Chun-Won Byun, Shin-Hyuk Yang, and Chi-Sun Hwang

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2010

Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In–Ga–Zn oxide-based ferroelectric memory transistor

Applied Physics Letters

Sung-Min Yoon, Shin-Hyuk Yang, Soon-Won Jung, Chun-Won Byun, Sang-Hee Ko Park, Chi-Sun Hwang1, Gwang-Geun Lee, Eisuke Tokumitsu, and Hiroshi Ishiwara

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2010

Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer

Applied Physics Letters

Shinhyuk Yang, Doo-Hee Cho, Min Ki Ryu, Sang-Hee Ko Park, Chi-Sun Hwang, Jin Jang, and Jae Kyeong Jeong

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2010

Thin-film transistors based on p-type Cu2O thin films produced at room temperature

Applied Physics Letters

Elvira Fortunato, Vitor Figueiredo, Pedro Barquinha, Elangovan Elamurugu, Raquel Barros, Goncalo Goncalves, Sang-Hee Ko Park, Chi-Sun Hwang, and Rodrigo Martins

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2010

Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor

Applied Physics Letters

Himchan Oh, Sung-Min Yoon, Min Ki Ryu, Chi-Sun Hwang, Shinhyuk Yang, and Sang-Hee Ko Park

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2010

Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing

Applied Physics Letters

Elvira Fortunato, Raquel Barros, Pedro Barquinha, Vitor Figueiredo, Sang-Hee Ko Park, Chi-Sun Hwan, and Rodrigo Martins

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2010

Hydrogen Defect Passivation of Silicon Transistor on Plastic for High Performance Flexible Device Application

Electrochemical and Solid-State Letters

Musarrat Hasan, Sun Jin Yun, Jae Bon Koo, Sang Hee Ko Park, Yong Hae Kim, Seung Youl Kang, Jonghyun Rho, Jee Hoon Kim, Houk Jang, Jong-Hyun Ahn, Min-Seok Jo, and Hyunsang Hwang

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2010

Effect of Double-Layered Al2O3 Gate Insulator on the Bias Stability of ZnO Thin Film Transistors

Electrochemical and Solid-State Letters

Sung-Min Yoon, Sang-Hee Ko Park*, Shin-Hyuk Yang, Chun-Won Byun, and Chi-Sun Hwang

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2009

Transparent and Photo-stable ZnO Thin-film Transistors to Drive an Active Matrix Organic-Light-Emitting-Diode Display Panel

Advanced Materials

Sang-Hee K. Park, Chi-Sun Hwang, Minki Ryu, Shinhyuk Yang, Chunwon Byun, Jaeheon Shin, Jeong-Ik Lee, Kimoon Lee, Min Suk Oh, and Seongil Im

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2009

Transparent Oxide Thin-Film Transistors Composed of Al and Sn-doped Zinc Indium Oxide

IEEE Electron Device Letters

Doo-Hee Cho, Shinhyuk Yang, Chunwon Byun, Min Ki Ryu, Sang-Hee Ko Park, Chi-Sun Hwang, Sung Min Yoon, and Hye-Yong Chu

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2009

Analytical Modeling of IGZO Thin-Film Transistors Based on the Exponential Distribution of Deep and Tail States

Journal of the Korean Physical Society

SHIN Jae-Heon ; HWANG Chi-Sun ; CHEONG Woo-Seok ; SANG-HEE KO PARK; CHO Doo-Hee ; RYU Minki ; YOON Sung-Min ; BYUN Chun-Won ; YANG Shin-Hyuk ; HYE YONG CHU ; KYOUNG IK CHO

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2009

Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED

IEICE TRANSACTIONS on Electronics

Doo-Hee CHO, Sang-Hee Ko PARK, Shinhyuk YANG, Chunwon BYUN, Min Ki RYU, Jeong-Ik LEE, Chi-Sun HWANG, Sung Min YOON, Hye Yong CHU, Kyoung Ik CHO

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2009

Impact of Sn/Zn ratio on the gate bias and temperature-induced instability of Zn-In-Sn-O thin film transistors

Applied Physics Letters

Min Ki Ryu, Shinhyuk Yang, Sang-Hee Ko Park, Chi-Sun Hwang, and Jae Kyeong Jeong

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2009

Channel Protection Layer Effect on the Performance of Oxide TFTs

ETRI Journal

Park Sang-Hee Ko; CHO Doo-Hee ; HWANG Chi-Sun ; YANG Shinhyuk ; MIN KI RYU ; BYUN Chun-Won ; SUNG MIN YOON ; CHEONG Woo-Seok ; KYOUNG IK CHO ; JEON Jae-Hong

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2009

Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer

Journal of Physics D: Applied Physics

Sung-Min Yoon , Shin-Hyuk Yang , Sang-Hee Ko Park, Soon-Won Jung , Doo-Hee Cho , Chun-Won Byun , Seung-Youl Kang , Chi-Sun Hwang and Byoung-Gon Yu

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2009

High performance thin film transistor with cosputtered amorphous Zn-In-Sn-O channel: Combinatorial approach

Applied Physics Letters

Ryu, Min Ki; Yang, Shinhyuk; Park, Sang-Hee Ko; Hwang, Chi-Sun; Jeong, Jae Kyeong

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2009

Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors

ETRI Journal

Jae-Heon Shin, Ji-Su Lee, Chi-Sun Hwang, Sang-Hee Ko Park, Woo-Seok Cheong, MR Ryu, Chun-Won,Byun, Jeong-lk Lee and Hye Yyong Chu

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2009

Impact of device configuration on the temperature instability of Al-Zn-Sn-O thin film transistors

Applied Physics Letters

Jeong, Jae Kyeong; Yang, Shinhyuk; Cho, Doo-Hee; Park, Sang-Hee Ko; Hwang, Chi-Sun; Cho, Kyoung Ik

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PUBLICATION

Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell

Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator

Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications

Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In–Ga–Zn oxide-based ferroelectric memory transistor

Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer

Thin-film transistors based on p-type Cu2O thin films produced at room temperature

Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor

Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing

Hydrogen Defect Passivation of Silicon Transistor on Plastic for High Performance Flexible Device Application

Effect of Double-Layered Al2O3 Gate Insulator on the Bias Stability of ZnO Thin Film Transistors

Transparent and Photo-stable ZnO Thin-film Transistors to Drive an Active Matrix Organic-Light-Emitting-Diode Display Panel

Transparent Oxide Thin-Film Transistors Composed of Al and Sn-doped Zinc Indium Oxide

Analytical Modeling of IGZO Thin-Film Transistors Based on the Exponential Distribution of Deep and Tail States

Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED

Impact of Sn/Zn ratio on the gate bias and temperature-induced instability of Zn-In-Sn-O thin film transistors

Channel Protection Layer Effect on the Performance of Oxide TFTs

Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer

High performance thin film transistor with cosputtered amorphous Zn-In-Sn-O channel: Combinatorial approach

Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors

Impact of device configuration on the temperature instability of Al-Zn-Sn-O thin film transistors

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