PUBLICATION

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JOURNALS

2011

Bending characteristics of ferroelectric polyvinylidene Fluoride trifluoroethylene capacitors fabricated on flexible polyethylene naphthalate substrate

Current Applied Physics

Sung-Min Yoon, Soon-Won Jung, Shinhyuk Yang, Sang-Hee Ko Park, Byoung-Gon Yu, Hiroshi Ishiwara

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2011

Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel

Semiconductor Science and Technology

Sung-Min Yoon, Shinhyuk Yang, Chun-Won Byun, Soon-Won Jung, Min-Ki Ryu, Sang-Hee Ko Park, ByeongHoon Kim, Himchan Oh, Chi-Sun Hwang and Byoung-Gon Yu

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2011

See-Through Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel

Journal of the Korean Physical Society

Sung-Min Yoon; Chun-Won Byun; Shinhyuk Yang; Sang-Hee Ko Park; Doo-Hee Cho; Soon-Won Jung; Seung-Youl Kang; Chi-Sun Hwang

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2011

Polymeric ferroelectric and oxide semiconductor-based fully transparent memristor cell

Applied Physics A

Sung-Min Yoon, Shinhyuk Yang, Soon-Won Jung, Chun-Won Byun, Min-Ki Ryu, Woo-Seok Cheong, ByeongHoon Kim, HimChan Oh, Sang-Hee Ko Park and Chi-Sun Hwang

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2011

Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor

IEEE Transaction on electron Devices

Sung-Min Yoon; Shinhyuk Yang; Min-Ki Ryu; Chun-Won Byun; Soon-Won Jung; Sang-Hee Ko Park; Chi-Sun Hwang; Kyoung-Ik Cho

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2011

Low-Temperature Processed Flexible In-Ga-Zn-O thin film transistors Exhibiting High Electrical Performance

IEEE Electron Device Letters

Shinhyuk Yang; Jun Yong Bak; Sung-Min Yoon; Min Ki Ryu; Himchan Oh; Chi-Sun Hwang; Gi Heon Kim; Sang-Hee Ko Park; Jin Jang

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2011

Water-related abnormal instability of transparent oxide/organic hybrid thin film transistors

APPLIED PHYSICS LETTERS

Shinhyuk Yang, Chi-Sun Hwang, Jeong-Ik Lee, Sung-Min Yoon, Min-Ki Ryu, Kyoung-Ik Cho, Sang-Hee Ko Park, Se-Hyun Kim, Chan-Eon Park, and Jin Jang

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2011

Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment

APPLIED PHYSICS LETTERS

Shinhyuk Yang, Kwang Hwan Ji, Un Ki Kim, Cheol Seong Hwang, Sang-Hee Ko Park, Chi-Sun Hwang, Jin Jang, and Jae Kyeong Jeong

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2010

Nonvolatile memory transistors using solution-processed zinc–tin oxide and ferroelectric poly(vinylidene fluoride-trifluoroethylene)

Organic Electronics

Sung-Min Yoon, Soon-Won Jun, Shinhyuk Yang, Chunwon Byun, Chi-Sun Hwang, Sang-Hee Ko Park, Hiroshi Ishiwara

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2010

Device reliability under electrical stress and photo response of oxide TFTs

Journal of the Society for Information Display

Sang-Hee Ko Park, Min-Ki Ryu, Sung-Min Yoon, Shinhyuk Yang, Chi-Sun Hwang, Jae-Hong Jeon

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2010

Fully Transparent Non-volatile Memory Thin-Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C

Advanced Functional Materials

Sung-Min Yoon, Shinhyuk Yang, Chunwon Byun, Sang-Hee Ko Park, Doo-Hee Cho, Soon-Won Jung, Oh-Sang Kwon, Chi-Sun Hwang

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2010

Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With SiNx and Si02 Gate Dielectrics

IEEE Electron Device Letters

Kwang Hwan Ji, Ji-In Kim, Yeon-Gon Mo, Jong Han Jeong, Shinhyuk Yang, Chi-Sun Hwang, Sang-Hee Ko Park, Ryu, Myung‐Kwan, Sang-Yoon Lee, Jae Kyeong Jeong

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2010

Interfacial Trap Density-of-States in Pentacene- and ZnO-Based Thin-Film Transistors Measured via Novel Photo-excited Charge-Collection Spectroscopy

Advanced Materials

Kimoon Lee, Min Suk Oh, Sung-jin Mun, Kwang H. Lee, Tae Woo Ha, Jae Hoon Kim, Sang-Hee Ko Park, Chi-Sun Hwang, Byoung H. Lee, Myung M. Sung, Seongil Im

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2010

Environmentally Stable Transparent Organic/Oxide Hybrid Transistor Based on an Oxide Semiconductor and a Polyimide Gate Insulator

IEEE Electron Devices Letters

Shinhyuk Yang, Jeong-Ik Lee, Sang-Hee Ko Park, Woo-Seok Cheong, Doo-Hee Cho, Sung-Min Yoon, Chun-Won Byun, Chi-Sun Hwang, Hye-Yong Chu, Kyoung-Ik Cho, Taek Ahn, Yoojeong Choi, Mi Hye Yi, Jin Jang

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2010

High-Performance Al-Sn-Zn-In-O Thin-Film Transistors: Impact of Passivation Layer on Device Stability

IEEE Electron Devices Letters

Yang Shinhyuk, Cho Doo-Hee, Min Ki Ryu,; Sang-Hee Ko Park, Hwang Chi-Sun, Jin Jang, Jae Kyeong Jeong

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2010

Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell

IEEE Electron Devices Letters

Yoon Sung-Min, Byun Chun-Won, Yang Shinhyuk, Sang-Hee Ko Park, Cho Doo-Hee, Jung Soon-Won, Kang Seung-Youl, Hwang Chi-Su

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2010

Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator

Electrochemical and Solid-State Letters

Sung-Min Yoon, Shin-Hyuk Yang, Soon-Won Jung, Chun-Won Byun, Sang-Hee Ko Park, Chi-Sun Hwang, and Hiroshi Ishiwara

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2010

Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications

Journal of The Electrochemical Society

Sung-Min Yoon, Sang-Hee Ko Park*, Chun-Won Byun, Shin-Hyuk Yang, and Chi-Sun Hwang

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2010

Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In–Ga–Zn oxide-based ferroelectric memory transistor

Applied Physics Letters

Sung-Min Yoon, Shin-Hyuk Yang, Soon-Won Jung, Chun-Won Byun, Sang-Hee Ko Park, Chi-Sun Hwang1, Gwang-Geun Lee, Eisuke Tokumitsu, and Hiroshi Ishiwara

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2010

Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer

Applied Physics Letters

Shinhyuk Yang, Doo-Hee Cho, Min Ki Ryu, Sang-Hee Ko Park, Chi-Sun Hwang, Jin Jang, and Jae Kyeong Jeong

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PUBLICATION

Bending characteristics of ferroelectric polyvinylidene Fluoride trifluoroethylene capacitors fabricated on flexible polyethylene naphthalate substrate

Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel

See-Through Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel

Polymeric ferroelectric and oxide semiconductor-based fully transparent memristor cell

Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor

Low-Temperature Processed Flexible In-Ga-Zn-O thin film transistors Exhibiting High Electrical Performance

Water-related abnormal instability of transparent oxide/organic hybrid thin film transistors

Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment

Nonvolatile memory transistors using solution-processed zinc–tin oxide and ferroelectric poly(vinylidene fluoride-trifluoroethylene)

Device reliability under electrical stress and photo response of oxide TFTs

Fully Transparent Non-volatile Memory Thin-Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C

Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With SiNx and Si02 Gate Dielectrics

Interfacial Trap Density-of-States in Pentacene- and ZnO-Based Thin-Film Transistors Measured via Novel Photo-excited Charge-Collection Spectroscopy

Environmentally Stable Transparent Organic/Oxide Hybrid Transistor Based on an Oxide Semiconductor and a Polyimide Gate Insulator

High-Performance Al-Sn-Zn-In-O Thin-Film Transistors: Impact of Passivation Layer on Device Stability

Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell

Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator

Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications

Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In–Ga–Zn oxide-based ferroelectric memory transistor

Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer

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