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JOURNALS
2014
Influence of gate dielectric/channel interface engineering on the stability of amorphous indium gallium zinc oxide thin-film transistors
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Sung Haeng Cho, Min Ki Ryu, Hee-Ok Kim, Oh-Sang Kwon, Eun-Sook Park, Yong-Suk Roh,Chi-Sun Hwang, and Sang-Hee Ko Park
2014
Negative-Bias Light Stress Instability Mechanisms of the Oxide-Semiconductor Thin-Film Transistors Using In–Ga–O Channel Layers Deposited With Different Oxygen Partial Pressures
IEEE Transactions on Electron Devices
Jun Yong Bak, Shinhyuk Yang, Ho-Jun Ryu, Sang Hee Ko Park, Chi Sun Hwang, and Sung Min Yoon
2012
Investigation of the Low-Frequency Noise Behavior and Its Correlation with the Subgap Density of States and Bias-Induced Instabilities in Amorphous InGaZnO Thin-Film Transistors with Various Oxygen Flow Rates
Japanese Journal of Applied Physics
Chan-Yong Jeong, Ick-Joon Park, In-Tak Cho, Jong-Ho Lee, Euo-Sik Cho, Min Ki Ryu, Sang-Hee Ko Park, Sang-Hun Song, and Hyuck-In Kwon
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