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JOURNALS

2017

Electro-Thermal Annealing Method for Recovery of Cyclic Bending Stress in Flexible a-IGZO TFTs

IEEE Transactions on Electron Devices

Myung Keun Lee, Choong-Ki Kim, Jeong Woo Park, Eungtaek Kim, Myeong-Lok Seol, Jun-Young Park, Yang-Kyu Choi, Sang-Hee Ko Park, Kyung Cheol Choi

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2017

Low-Resistive High-Work-Function Gate Electrode for Transparent a-IGZO TFTs

IEEE Transactions on Electron Devices

Woo Jae Jang, Myung Keun Lee, Eungtaek Kim, Dae Young Yang, Junhong Park, Jeong Woo Park, Sang-Hee Ko Park, Kyung Cheol Choi

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2016

Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application

ACS Applied Materials & Interfaces

Hyo Yeon Kim, Eun Ae Jung, Geumbi Mun, Raphael E. Agbenyeke, Bo Keun Park, Jin-Seong Park, Seung Uk Son, Dong Ju Jeon, Sang-Hee Ko Park, Taek-Mo Chung, and Jeong Hwan Han

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2016

The Influence of Hydrogen on Defects of In–Ga–Zn–O Semiconductor Thin-Film Transistors With Atomic-Layer Deposition of Al2O3

IEEE Electron Device Letters, Volume

Taeho Kim, Yunyong Nam, Jihyun Hur ,Sang-Hee Ko Park, Sanghun Jeon

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2016

Effect of a rapid thermal annealing process on the electrical properties of an aluminum-doped indium zinc tin oxide thin film transistor

Physica Status Solidi A

Yunyong Nam, Jong-Heon Yang, Pilseong Jeong, Oh-Sang Kwon, Jae-Eun Pi, Sung Haeng Cho, Chi-Sun Hwang, Jeahan Ahn, Sanghyun Ji, Sang-Hee Ko Park*

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2016

Skin‐Like Oxide Thin‐Film Transistors for Transparent Displays

Advanced Functional Materials

Han Eol Lee, Seungjun Kim, Jongbeom Ko, Hye‐In Yeom, Chun‐Won Byun, Seung Hyun Lee, Daniel J. Joe, Tae‐Hong Im, Sang‐Hee Ko Park*, Keon Jae Lee

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2016

Oxide Vertical TFTs for the Application to the Ultra High Resolution Display

SID Symposium Digest of Technical Papers

Hye-In Yeom, Geumbi Moon, Yunyong Nam, Jong-Beom Ko, Seung-Hee Lee, Junyong Choe, Ji Hoon Choi, Chi-Sun Hwang, and Sang-Hee Ko Park*

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2016

High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition

Journal of Materials Chemistry C

Hye-In Yeom, Jong Beom Ko, Geumbi Mun & Sang-Hee Ko Park*

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2016

Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors

Nanotechnology

Taeho Kim, Yunyong Nam, Ji-Hyun Hur, Sang-Hee Ko Park and Sanghun Jeon

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2016

Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor

Journal of Information Display

Yunyong Nam, Hee-Ok Kim, Sung Haeng Cho, Chi-Sun Hwang, Taeho Kim, Sanghun Jeon and Sang-Hee Ko Park*

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2016

Plasma-Enhanced Atomic Layer Deposition Processed SiO2 Gate Insulating Layer for High Mobility Top-Gate Structured Oxide Thin-Film Transistors

IEEE Electron Device Letters

Jong Beom Ko, Hye In Yeom, and Sang-Hee Ko Park*

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2014

High-Performance Hybrid Complementary Logic Inverter through Monolithic Integration of a MEMS Switch and an Oxide TFT

Small

Yong-Ha Song, Sang-Joon Kenny Ahn, Min-Wu Kim, Jeong-Oen Lee, Chi-Sun Hwang, Jae-Eun Pi, Seung-Deok Ko, Kwang-Wook Choi, Sang-Hee Ko Park*, and Jun-Bo Yoon

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2014

The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates

APPLIED PHYSICS LETTERS

Kyung-Chul Ok, Sang-Hee Ko Park, Chi-Sun Hwang, H. Kim, Hyun Soo Shin, Jonguk Bae, and Jin-Seong Park

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2014

Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method

IEEE Electron Device Letters

Chi-Sun Hwang, Sang-Hee Ko Park, Himchan Oh, Min-Ki Ryu, Kyoung-Ik Cho, and Sung-Min Yoon

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2014

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In-Ga-Zn-O Active Channel and ZnO Charge-Trap Layer

IEEE Electron Device Letters

Bak, Jun Yong, Ryu, Min-Ki, Park, Sang-Hee Ko, Hwang, Chi Sun, Yoon, Sung Min

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2014

Influence of gate dielectric/channel interface engineering on the stability of amorphous indium gallium zinc oxide thin-film transistors

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Sung Haeng Cho, Min Ki Ryu, Hee-Ok Kim, Oh-Sang Kwon, Eun-Sook Park, Yong-Suk Roh,Chi-Sun Hwang, and Sang-Hee Ko Park

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2014

Negative-Bias Light Stress Instability Mechanisms of the Oxide-Semiconductor Thin-Film Transistors Using In–Ga–O Channel Layers Deposited With Different Oxygen Partial Pressures

IEEE Transactions on Electron Devices

Jun Yong Bak, Shinhyuk Yang, Ho-Jun Ryu, Sang Hee Ko Park, Chi Sun Hwang, and Sung Min Yoon

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2013

Bilayered Etch-Stop Layer of Al2O3/SiO2 for High-Mobility In–Ga–Zn–O Thin-Film Transistors

Japanese Journal of Applied Physics

Sang-Hee Ko Park, Jong Woo Kim, Min-Ki Ryu, Jae-Eun Pi, Chi-Sun Hwang, and Sung-Min Yoon

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2013

Comparative studies on electrical bias temperature instabilities of In–Ga–Zn–O thin film transistors with different device configurations

Solid State Electronics

Min-Ki Ryu, Sang-Hee Ko Park, Chi-Sun Hwang, Sung-Min Yoon

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2013

A Transparent Logic Circuit for RFID Tag in a-IGZO TFT Technology

ETRI Journal

Byung-Do Yang, Jae-Mun Oh, Hyeong-Ju Kang, Sang-Hee Ko Park, Chi-Sun Hwang, Min Ki Ryu, and Jae-Eun Pi

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PUBLICATION

Electro-Thermal Annealing Method for Recovery of Cyclic Bending Stress in Flexible a-IGZO TFTs

Low-Resistive High-Work-Function Gate Electrode for Transparent a-IGZO TFTs

Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application

The Influence of Hydrogen on Defects of In–Ga–Zn–O Semiconductor Thin-Film Transistors With Atomic-Layer Deposition of Al2O3

Effect of a rapid thermal annealing process on the electrical properties of an aluminum-doped indium zinc tin oxide thin film transistor

Skin‐Like Oxide Thin‐Film Transistors for Transparent Displays

Oxide Vertical TFTs for the Application to the Ultra High Resolution Display

High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition

Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors

Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor

Plasma-Enhanced Atomic Layer Deposition Processed SiO2 Gate Insulating Layer for High Mobility Top-Gate Structured Oxide Thin-Film Transistors

High-Performance Hybrid Complementary Logic Inverter through Monolithic Integration of a MEMS Switch and an Oxide TFT

The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates

Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In-Ga-Zn-O Active Channel and ZnO Charge-Trap Layer

Influence of gate dielectric/channel interface engineering on the stability of amorphous indium gallium zinc oxide thin-film transistors

Negative-Bias Light Stress Instability Mechanisms of the Oxide-Semiconductor Thin-Film Transistors Using In–Ga–O Channel Layers Deposited With Different Oxygen Partial Pressures

Bilayered Etch-Stop Layer of Al2O3/SiO2 for High-Mobility In–Ga–Zn–O Thin-Film Transistors

Comparative studies on electrical bias temperature instabilities of In–Ga–Zn–O thin film transistors with different device configurations

A Transparent Logic Circuit for RFID Tag in a-IGZO TFT Technology

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